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Front‐illuminated long wavelength multiple quantum‐well infrared photodetectors with backside gratings
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J. Appl. Phys. 78, 6822 (Fri Dec 01 00:00:00 UTC 1995);
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A front‐illuminated long wavelength multiple quantum‐well infrared photodetector(QWIP) with backside gratings is successfully fabricated. The front illumination is achieved through the reflection of incoming light by etchedgratings fabricated on the backside of the wafer. The detector is based on bound‐ o‐continuum state transition in the quantum wells. The epitaxial structure is grown by molecular beam epitaxy. There are 30 periods of GaAs/AlGaAs quantum wells. The measured results show a detection peak at 8.7 μm and a cutoff wavelength of 10.3 μm. The dark current of QWIP is studied in the temperature range from 20 to 300 K. The dark current is found to be due to thermionic emission at low bias voltage and in the temperature range above 50 K, and due to tunneling in the low‐ emperature range below 50 K and at a bias voltage above 1 V.
Received Mon Apr 24 00:00:00 UTC 1995
Accepted Mon Jul 31 00:00:00 UTC 1995
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Front‐illuminated long wavelength multiple quantum‐well infrared photodetectors with backside gratings
J. Appl. Phys. 78, 6822 (Fri Dec 01 00:00:00 UTC 1995);
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Scitation: Front‐illuminated long wavelength multiple quantum‐well infrared photodetectors with backside gratings
http://aip./content/aip/journal/jap/78/11/10.442
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