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来源：蜘蛛抓取(WebSpider) 时间：2012-01-18 03:22 标签： 有没有sp网站
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, 13 June 2014, Pages
Small valence band offsets of non-polar ZnO/Zn1 & xMgxO heterojunctions measured by X-ray photoelectron spectroscopy, , , , , , , , ,
State Key Laboratory of Silicon Materials, Cyrus Tang Center for Sensor Materials and Applications, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, People's Republic of China&The ΔEVΔEV of the a-plane ZnO/Zn1 & xMgxO heterojunctions were investigated by XPS.&CBM is more sensitive to the Mg composition in non-polar Zn1 & xMgxO.&The difference of band offsets is mainly attributed to spontaneous polarization.&The non-polar ZnO/Zn1 & xMgxO will be utilized to facilitate p-type doping.The valence band offsets (ΔEVΔEV) of the a-plane non-polar ZnO/Zn1 & xMgxO heterojunctions grown by plasma-assisted molecular beam epitaxy were investigated by X-ray photoelectron spectroscopy. Excluding the strain effect, the ΔEVΔEV are determined to be &0.02 eV, &0.02 eV, &0.03 eV, and the related conduction band offsets (ΔECΔEC) are deduced to be 0.06 eV, 0.10 eV, 0.17 eV for x=0.05,0.08and0.13, respectively. The heterojunctions form in the type-I straddling alignment and the Mg composition dependent band alignment is revealed. Our results show important polarity dependence for ZnO/Zn1 & xMgxO heterojunctions. The accurate determination of the band alignment of non-polar ZnO/Zn1 & xMgxO heterojunctions is valuable for designing non-polar ZnO-based optoelectronic devices.KeywordsValence band offset; X-ray photoelectron spectroscopy; Non-polar ZnO/Zn1 & xMgxO heterojunctions; Mg composition; Type-I band alignment
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